Stacking faults in semi-polar 6H-SiC single crystals

✍ Scribed by Y. Q. Gao; X. B. Hu; X. G. Xu; X. F. Chen; Y. Peng; S. Song; M. H. Jiang; W. X. Huang

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 194 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000643

✦ Synopsis

Abstract

6H‐SiC single crystals have been successfully grown on (1015) plane seed by sublimation method. High density stacking faults (SFs) were observed by transmission synchrotron radiation X‐ray topography. Based on the invisibility criteria of stacking faults, the displacement vectors of most SFs were determined to be the type of 1/6[1120]. Laser scanning confocal microscopy (LSCM) was used to observe the etching morphology of (0115) wafer. The etching steps of SFs were found and their density decreased from 3.6×10^3^ cm^‐1^ to 2.0×10^2^ cm^‐1^ along the <0001> projection direction. The inclination angles of the SFs etching step plane to (10‐15) plane were measured by line scanning of LSCM. It was found that the inclination angles decreased from 20° to 10° along the <0001> projection direction. Different etching characteristics of SFs along radial direction of 6H‐SiC (1015) wafer should be attributed to different displacement vectors and different stacking fault energies for these stacking faults. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)