Stacking fault in Bi2Te3 and Sb2Te3 single crystals
β Scribed by Bhakti Jariwala; D.V. Shah
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 836 KB
- Volume
- 318
- Category
- Article
- ISSN
- 0022-0248
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Single crystals of Sb 2 Te 3 doped with Ag (c Ag β«Ψβ¬ (0-9) Ψ 10 19 cm Ψ3 ) were prepared from the melt Sb 2Ψx Ag x Te 3 (denoted by a) or the melt Sb 2 Ag x Te 3 (denoted by b). The reflectivity in the IR region, electrical conductivity, and Hall coefficient were determined for these crystals. From
Thermoelectric properties of materials are essentially based on the thermoelectrical figure of merit \(Z=S^{2} \sigma / K\), where \(S\) is the thermoelectrical power, \(\sigma\) the electrical conductivity and \(K\) the thermal conductivity. Narrow-bandgap semiconductors \(\mathrm{Bi}_{2} \mathrm{T