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Stacking Fault Energy of Silicon Carbide (SiC) Polytypes

โœ Scribed by Momeen; Prof. M. Y. Khan


Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
356 KB
Volume
30
Category
Article
ISSN
0232-1300

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โœฆ Synopsis


Abstract

A polytypic material grown under similar thermodynamic conditions occurs in several phases which are included as ordered and disordered ones. These phases occur with a minimum free energy difference โ‰… kT. This relative free energy (stacking fault energy) has been evaluated here using different methods.


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## Comments on stacking fault energy of thorium* In recent years enough evidence has been accumulated that the stacking fault energy of a metal may be roughly estimated by t,ransmission electron