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Stability of an exciton bound to an ionized donor impurity in a GaAs/Ga1−xAlxAs semiconductor quantum well in a magnetic field

✍ Scribed by I. Essaoudi; B. Stébé; A. Ainane; M. Saber


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
105 KB
Volume
14
Category
Article
ISSN
1386-9477

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Effects of an Electric Field on the Bind
✍ G. Murillo; N. Porras-Montenegro 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 79 KB 👁 2 views

The binding energy of a donor impurity in a spherical GaAs±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation