Convective scheme solution of the Boltzm
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D.A. Fixel; W.N.G. Hitchon
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Article
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2007
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Elsevier Science
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English
⚖ 440 KB
A model for the simulation of the electron energy distribution in nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzman