The Book Considers The Main Growth-related Phenomena Occurring During Epitaxial Growth, Such As Thermal Etching, Doping, Segregation Of The Main Elements And Impurities, Coexistence Of Several Phases At The Crystal Surface And Segregation-enhanced Diffusion. It Is Complete With Tables, Graphs And Fi
[Springer Tracts in Modern Physics] Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy Volume 156 || II–VI materials
✍ Scribed by ,
- Book ID
- 111887822
- Publisher
- Springer Berlin Heidelberg
- Year
- 1999
- Tongue
- German
- Weight
- 116 KB
- Edition
- 1999
- Category
- Article
- ISBN
- 3540657940
No coin nor oath required. For personal study only.
✦ Synopsis
The Book Considers The Main Growth-related Phenomena Occurring During Epitaxial Growth, Such As Thermal Etching, Doping, Segregation Of The Main Elements And Impurities, Coexistence Of Several Phases At The Crystal Surface And Segregation-enhanced Diffusion. It Is Complete With Tables, Graphs And Figures, Which Allow Fast Determination Of Suitable Growth Parameters For Practical Applications. Introduction -- Basics Of Mbe Growth -- Doping And Impurity Segregation Effects In Mbe -- Influence Of Strain In The Epitaxial Film On Surface Phase Equilibria -- Conclusion. Nikolai N. Ledentsov. Includes Bibliographical References (p. [77]-84) And Index.
📜 SIMILAR VOLUMES
The Book Considers The Main Growth-related Phenomena Occurring During Epitaxial Growth, Such As Thermal Etching, Doping, Segregation Of The Main Elements And Impurities, Coexistence Of Several Phases At The Crystal Surface And Segregation-enhanced Diffusion. It Is Complete With Tables, Graphs And Fi