Spin-valve effects in a two-dimensional electron gas system

✍ Scribed by S Gardelis; C.G Smith; W.Y Lee; C.H.W Barnes; E.H Linfield; D.A Ritchie; J.A.C Bland

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 88 KB
• Volume: 6
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(99)00180-0

✦ Synopsis

We present results on spin-polarized electron transport from a ferromagnet to a two-dimensional electron gas system (2DEG). The investigated device consists of an injector and a collector contact made from ferromagnetic permalloy thin ÿlms with di erent coercive ÿelds. That allows parallel or antiparallel magnetization of the contacts in di erent applied magnetic ÿelds. The conducting medium is a 2DEG formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two di erent types of spin-valve e ect: the ÿrst is due to the ferromagnet-semiconductor contact resistance, determined by the zero-ÿeld spin-splitting in InAs, and the second is due to the propagation of electrons with a spin imbalance through the 2DEG without spin-scattering.