Spin transport and injection in high-In content InGaAs/InAIAs heterostructures

✍ Scribed by Syoji Yamada

• Publisher: Institute of Physics and National Institute of Materials Science
• Year: 2003
• Tongue: English
• Weight: 241 KB
• Volume: 4
• Category: Article
• ISSN: 1468-6996
• DOI: 10.1016/s1468-6996(03)00017-2

✦ Synopsis

Recent progresses in the research area of so-called 'semiconductor spintronics' carried out at Center for Nano Materials and Technology, JAIST are reviewed. Based on the successful MBE growth of new type narrow-gap heterostructure composed of In 0.75 Ga 0.25 As and In 0.75 Al 0.25 As, we recently have developed spin-injection experiment in planar four-terminal device made on the modulaton-doped normal type heterojunction, spin-filtering analysis in resonant tunneling diode with asymmetric center well and Ni emitter, and quantum transport analysis in mesoscopic devices made on the heterojunction. Some important results obtained in those experiments are reported and discussed.