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Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

✍ Scribed by Liu, L.; Pai, C.-F.; Li, Y.; Tseng, H. W.; Ralph, D. C.; Buhrman, R. A.


Book ID
111654400
Publisher
American Association for the Advancement of Science
Year
2012
Tongue
English
Weight
524 KB
Volume
336
Category
Article
ISSN
0036-8075

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## Abstract Spin torque due to spin polarized tunneling current can be used to switch the free layer in a magnetic tunnel junction (MTJ). This current also gives rise to an Ampere torque, which influences the switching threshold of the MTJ. We modified the Landau–Lifschitz–Gilbert equation (LLGE) t