Spin selective transport at the ferromagnet/semiconductor interface

✍ Scribed by J.A.C. Bland; T. Taniyama; W.S. Cho; S.J. Steinmueller

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 122 KB
• Volume: 3
• Category: Article
• ISSN: 1567-1739
• DOI: 10.1016/s1567-1739(03)00106-8

✦ Synopsis

Recent advances in spin-polarized electron transport at the ferromagnet/semiconductor interface are summarized in the context of potential applications to spin-electronics. We review evidence for spin injection from a ferromagnetic metal into a semiconductor based on recent studies of polarized luminescence in ferromagnet/quantum well light emitting diode structures. Our recent results on spin-polarized electron transport from GaAs into Fe under optical spin pumping are shown. These observations clearly indicate an importance of the introduction of a tunneling barrier between the ferromagnetic metal and semiconductor in order to achieve a high spin injection and detection efficiency.