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Spin-resolved photoemission and ab initio theory of graphene/SiC

✍ Scribed by Marchenko, D.; Varykhalov, A.; Scholz, M. R.; Sánchez-Barriga, J.; Rader, O.; Rybkina, A.; Shikin, A. M.; Seyller, Th.; Bihlmayer, G.

Book ID
120813622
Publisher
The American Physical Society
Year
2013
Tongue
English
Weight
424 KB
Volume
88
Category
Article
ISSN
1098-0121

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## Abstract Stacking faults (SFs) in the cubic polytype of silicon carbide (3C‐SiC) can bring about the leakage current in devices or cause warping of wafers. Along with experimental efforts with the aim to reduce SFs in 3C‐SiC, theoretical approach is needed to reveal the mechanical aspects of SFs