Conversion of charge current into pure spin current and vice versa in non-magnetic semiconductors or metals, which are called the direct and inverse spin Hall effects (SHEs), provide a new functionality of materials for future spin-electronic architectures. Thus, the realization of a large SHE in a
Spin Hall effect and Nernst effect in FePt/Au multi-terminal devices with different Au thicknesses
โ Scribed by T. Seki; I. Sugai; Y. Hasegawa; S. Mitani; K. Takanashi
- Book ID
- 104093685
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 887 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0038-1098
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โฆ Synopsis
The spin-Hall effect and the Nernst effect were investigated in multi-terminal devices consisting of an FePt perpendicular spin polarizer and a Au Hall cross with different Au thicknesses. As the thickness of the Au Hall cross increased from 10 nm to 20 nm, the spin-Hall angle (ฮฑ H ) was significantly reduced. The significant reduction of the spin-Hall angle indicates that the interface and/or surface scattering of the electron spins play a crucial role for the large ฮฑ H . The voltage change due to the Nernst effect also decreased with increasing the thickness of the Au Hall cross.
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