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Spin hall accumulation in ballistic nanojunctions

✍ Scribed by S. Bellucci; P. Onorato


Book ID
111622356
Publisher
Springer
Year
2007
Tongue
English
Weight
291 KB
Volume
59
Category
Article
ISSN
1434-6036

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Nanoelectronic junctions were fabricated by electron beam lithography and wet etching of modulation doped GaAs /AlGaAs heterostructures. Voltage differences between the branches of the junctions lead to rectification characteristics, which persist up to room temperature. We have investigated the hig