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Spin effects in semiconductor quantum dot structures

✍ Scribed by S. Tarucha; D.G. Austing; S. Sasaki; Y. Tokura; J.M. Elzerman; W. van der Wiel; S. de Franseschi; L.P. Kouwenhoven

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
298 KB
Volume
10
Category
Article
ISSN
1386-9477

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Semiconductor quantum dots have been patterned into a Ga [Al]As heterostructure by local oxidation of the GaAs cap layer with an Atomic Force Microscope. The combination of high electron density and reduced shape deformation allows us to observe spin pairs in the dot's energy level spectrum, which i