We carry out a comprehensive analysis of Fano effect in electronic transport process through a parallel double quantum dot (QD) structure. First, we establish an expression of the linear conductance in the standard Fano form. This expression provides a uniform way to explain the presence of the Fano
Spin-dependent electron transport through a parallel double-quantum-dot structure
β Scribed by Weijiang Gong; Yisong Zheng
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 575 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
β¦ Synopsis
Electron transport properties in a parallel double-quantum-dot structure with three terminals are theoretically studied. By introducing a local Rashba spin-orbit coupling, we find that an incident electron from one terminal can select a specific terminal to depart from the quantum dots according to its spin state. As a result, spin polarization and spin separation can be simultaneously realized in this structure. And spin polarizations in different terminals can be inverted by tuning the structure parameters. The underlying quantum interference that gives rise to such a result is analyzed in the language of Feynman paths for the electron transmission.
π SIMILAR VOLUMES
The magnetoresistance of electrons in a two-dimensional array of dots has been investigated. The new commensurability oscillations were found when \(2 \mathrm{R}_{L}=\mathrm{d}\) and \(2 R_{L}=\mathrm{d} / 2\). The closed electron trajectories skipping inside the dot are responsible for these oscill
Making use of the equation of motion method and Keldysh Green function technique, we obtain a general current formula for a quantum-dot-ring with one of the dots connected to two electron reservoirs under a DC bias voltage. The transmission probability TΓ°oΓ as a function of electron o curve is prese
Nonlinear electron transport through a semiconductor quantum dot in the low-temperature Kondo regime is studied theoretically. Particular emphasis is put on examining the effects of the inherent multilevel electronic structure of the semiconductor dot. Combining the nonequilibrium Green function met