Spin centres on clean germanium and silicon surfaces and their interaction with adsorbed molecules

✍ Scribed by G. B. Demidovich; S. N. Karyagin; V. F. Kiselev

• Publisher: John Wiley and Sons
• Year: 1982
• Tongue: English
• Weight: 723 KB
• Volume: 114
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2221140249

✦ Synopsis

Abstract

The nature of surface states on clean Ge and Si surfaces is discussed. New experimental data about the interaction of different acceptor molecules with clean Ge and Si surfaces are presented. New paramagnetic adsorption centres are detected by the EPR method. The characteristic feature of the EPR signal detected is a superfine splitting on the ^29^Si nuclei. This result shows that the unpaired electron in paramagnetic complexes formed by adsorption are largely drawn into the Si atoms. The initial heats of O~2~ adsorption on clean Ge and Si surfaces, measured by calorimetric method, confirm the dissociative character of the first stages of oxidation and double bond formation.