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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs

✍ Scribed by Quillec, Maurice; Razeghi, Manijeh

Book ID: 121481786
Publisher: SPIE
Year: 1991
Weight: 345 KB
Volume: 1361
Category: Article
DOI: 10.1117/12.24285

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