SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Physics and Simulation of Optoelectronic Devices VII - Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment

✍ Scribed by Hybertsen, Mark S.; Alam, Muhammad A.; Shtengel, Gleb E.; Belenky, Gregory L.; Reynolds, Jr., C. L.; Donetsky, Dmitri V.; Smith, R. Kent; Baraff, Gene A.; Kazarinov, Rudolf F.; Wynn, James D.; Smith, L. E.; Blood, Peter; Ishibashi, Akira; Osinski, Marek

• Book ID: 120614500
• Publisher: SPIE
• Year: 1999
• Weight: 591 KB
• Volume: 3625
• Category: Article
• DOI: 10.1117/12.356912