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SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - An improved SOI MESFET with triple-recessed drift region for electrical performance improvement

✍ Scribed by Orouji, Ali A.; Ghasemian, Masoomeh; Aminbeidokhti, Amirhossein; Rahmaninezhad, Soude; Katiyar, Monica; Mazhari, B.; Mohapatra, Y N.

No coin nor oath required. For personal study only.

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