Confinement effects in crystallization a
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M. Zacharias; J. Heitmann; M. Schmidt; P. Streitenberger
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Article
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2001
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Elsevier Science
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English
β 181 KB
This article presents our comprehensive investigation of the crystallization of amorphous silicon ΓΏlms with a layer thickness below 20 nm from an experimental as well as from a theoretical point of view. The exponential scaling of the crystallization temperature with layer thickness is derived by us