A preliminary study of growth interruption effects on the GaAs/AlGaAs layers is reported. Deep level transient spectroscopy (DLTS) is performed on Al Schottky barrier devices fabricated on Si-doped, isotype GaAs/Al 0.78 Ga 0.22 As heterostructures grown by molecular beam epitaxy (MBE), both with (20
Spectroscopy of the deep levels in tin-doped Ga-Al-As
β Scribed by B. Balland; R. Blondeau; L. Mayet; B. de Cremoux; P. Hirtz
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 372 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0040-6090
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Quantum dots (QDs), which capture and emit carriers like a giant trap, are studied using deep level transient spectroscopy (DLTS). The electrons and holes in the QDs are emitted from the relevant energy levels to the conduction and valence bands, respectively, of the barrier layers with increasing t
Deep hole traps in Be doped p-type Al 0.2 Ga 0.8 As grown by molecular beam epitaxy have been studied by the deeplevel transient-spectroscopy method applied to samples with a Schottky diode configuration. Six hole traps, labeled as H1-H6, were found. Activation energies and capture cross sections ha