Persistent spectral hole-burning in the Q-band region is reported for a concentrated (= 2 x 10 -2 mol 1-]) matrix of copper phthalocyanine in solid Ar at 1.6 K. Hole-burning occurs with a quantum efficiency of = 10 -6 and can be reversed by annealing at ~ 28 K. Vibrational side holes allow determina
Spectral hole burning on silicon phthalocyanines isolated in an argon matrix
โ Scribed by Dieter Braun; Arnout Ceulemans; Bernhard Dick; Hideo Konami
- Book ID
- 103036633
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 567 KB
- Volume
- 225
- Category
- Article
- ISSN
- 0009-2614
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โฆ Synopsis
Irradiation of the monomeric phthalocyanine Hex$iO( SiPc)OSiHex3 isolated in an Ar matrix at T= 13 Kwith the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located about 700 cm-' above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise determination of several excited-state vibrational frequencies. For dimeric HexrSiO( SiPc-0-SiPc)OSiHexr in the same matrix the changes in the absorption spectra after irradiation into the Q band reveal an out-of-plane polarization of the bands which are not present in the monomer absorption. This points to substantial charge-resonance contributions to the excitonic coupling between the two SiPc units in dimeric Hex$iO ( SiPc-0-SiPc)OSiHexJ.
๐ SIMILAR VOLUMES
An optical transmission filter based on photochemical hole burning has been applied for the measurement of the resonance fluorescence spectrum of H,-octaethylporphin impurity in an amorphous polystyrene matrix in the temperature range T= 5.1 -I K. A comparison with the results of hole-burning experi