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Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

โœ Scribed by Dieter Braun; Arnout Ceulemans; Bernhard Dick; Hideo Konami


Book ID
103036633
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
567 KB
Volume
225
Category
Article
ISSN
0009-2614

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โœฆ Synopsis


Irradiation of the monomeric phthalocyanine Hex$iO( SiPc)OSiHex3 isolated in an Ar matrix at T= 13 Kwith the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located about 700 cm-' above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise determination of several excited-state vibrational frequencies. For dimeric HexrSiO( SiPc-0-SiPc)OSiHexr in the same matrix the changes in the absorption spectra after irradiation into the Q band reveal an out-of-plane polarization of the bands which are not present in the monomer absorption. This points to substantial charge-resonance contributions to the excitonic coupling between the two SiPc units in dimeric Hex$iO ( SiPc-0-SiPc)OSiHexJ.


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