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Specific features of silicon surface region fluorination by RIE in r.f. CF4 plasma – A novel method for improving the electrical properties of thin PECVD silicon oxide films

✍ Scribed by Małgorzata Kalisz; Robert Mroczyński


Book ID
113797947
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
754 KB
Volume
94
Category
Article
ISSN
0167-9317

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