Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

Relationship between non-localized tail

Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O

✍ Nomura, K. ;Kamiya, T. ;Ohta, H. ;Shimizu, K. ;Hirano, M. ;Hosono, H. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 375 KB

## Abstract The relationship between non‐localized tail states and carrier transport in transparent amorphous oxide semiconductor, In–Ga–Zn–O (a‐IGZO), was investigated. It was found that the energy width (__E__~0~) of the non‐localized tail states varied from <7 meV to 20 meV depending on the film