Spatially direct recombinations observed in multiple δ-doped GaAs layers
✍ Scribed by A. Levine; E.C.F. da Silva; L.M.R. Scolfaro; D. Beliaev; A.A. Quivy; R. Enderlein; J.R. Leite
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 109 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Experimental and theoretical studies on n-type multiple δ-doped GaAs layers are reported. Photoluminescence is measured and compared with results of self-consistent electronicstructure calculations. A series of samples with different donor concentrations in the δdoped layer and a fixed distance between adjacent Si-doped layers (d s = 300 Å) were analysed. The PL spectra of the investigated samples do not show transitions involving confined electronic minibands. However, the full width at half maximum of the observed main emission band may be correlated with the calculated electronic miniband structures.