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Some properties of several boron modifications and their electronic structure

โœ Scribed by E. A. Zhurakovskii; Yu. B. Paderno; L. I. Zadvornyi; T. N. Bondarenko; V. P. Dzeganovskii; L. A. Ivanchenko

Book ID
112411076
Publisher
Springer
Year
1978
Tongue
English
Weight
450 KB
Volume
17
Category
Article
ISSN
1573-9066

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For -rhombohedral boron and boron carbide, the hitherto best-investigated icoasahedral boron-rich solids, the concentrations of structural defects and electronic gap states are quantitatively correlated. In this way the theoretically determined valence electron de5ciencies are exactly compensated, a