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Some properties of CdS/p-Ge heterojunctions grown by chemical transport

✍ Scribed by C. Ghezzi; C. Paorici; C. Pelosi


Publisher
Springer
Year
1976
Tongue
English
Weight
672 KB
Volume
11
Category
Article
ISSN
1432-0630

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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 Β°C without thermal annealing and allowing the integration w