𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Some features of the transverse thermomagnetic effect in bismuth

✍ Scribed by D. V. Gitsu; F. M. Muntyanu; A. S. Fedorko


Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
267 KB
Volume
42
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

The transverse Nernst‐Ettingshausen (N‐E) effect in Bi samples with different crystallographic orientation is discussed. It is found that in samples in which the temperature gradient is directed along one of the basic crystallographic directions (bisector, C~2~ or C~3~) and a non‐zero component of the magnetic field along the C~2~‐axis (which is assumed to be the X‐axis) is present, the value comprises mixed even terms. It is shown that the conditions for even terms in transverse N‐E effect are identical with those for odd terms in longitudinal N‐E effect [2].


📜 SIMILAR VOLUMES


Effect of uniaxial compression on the th
✍ M. E. Ertl; I. U. Rahman 📂 Article 📅 1971 🏛 John Wiley and Sons 🌐 English ⚖ 315 KB

## Abstract Thermomagnetic transport parameters have been measured in bismuth at 80 °K and found to be strongly pressure‐dependent. Results indicate that in addition to a decrease in the energy overlap, __E__~0~, there is an increased participation of a light hole band increasing the mobility of ho

Some simple features of the Mössbauer ef
✍ Harry J Lipkin 📂 Article 📅 1960 🏛 Elsevier Science 🌐 English ⚖ 459 KB

A simple description is given of the change in the state of a crystal lattice upon emission or absorption of a nuclear gamma ray. A sum rule is derived for the average energy transfer to the lattice. The probability of zero energy transfer is calculated. The results are general and do not assume a p

Disorder-induced features of the transve
✍ I. Shlimak; K.-J. Friedland; V. Ginodman; S.V. Kravchenko 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 297 KB

## Abstract We investigate two features of the transverse resistance __R~xy~__ in a Si‐MOSFET in the quantum Hall effect regime. The first, the “overshoot” phenomenon, is observed at filling factor ν = 3. In this case, when the magnetic field increases and the filling factor ν approaches ν = 3, __R