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Some electrical and photovoltaic properties of p-GaAs–n-ZnSe diodes

✍ Scribed by Balch, J. W. ;Anderson, W. W.

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
423 KB
Volume
9
Category
Article
ISSN
0031-8965

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The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the