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Some design considerations for low voltage contacts

โœ Scribed by R.G. Bayer; D.D. Roshon

Book ID
113189998
Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
857 KB
Volume
4
Category
Article
ISSN
0026-2714

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๐Ÿ“œ SIMILAR VOLUMES

Design considerations for low damage pro
Design considerations for low damage process plasmas
โœ M. Rahman; L.G. Deng; A. Boyd; A. Ribayrol; C.D.W. Wilkinson; J.A. van den Berg; ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 315 KB

Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCh reactive ion etching system as well as the effect of bombardment of separate constituent