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Solvent Vapor-Induced Nanowire Formation in Poly(3-hexylthiophene) Thin Films

✍ Scribed by Do Hwan Kim; Yeong Don Park; Yunseok Jang; Sungsoo Kim; Kilwon Cho

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 308 KB
Volume: 26
Category: Article
ISSN: 1022-1336
DOI: 10.1002/marc.200400647

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✦ Synopsis

Abstract

Summary: Nanowire lengths and length‐to‐width aspect ratios in regioregular poly(3‐hexylthiophene) (P3HT) were simply controlled through changes in the solvent vapor pressure during solidification. It is demonstrated that the nanowires grew by rod‐to‐rod association, in which the molecular long axis of the P3HT chains appeared to be well‐oriented parallel to the silicon substrate (Si/SiO~x~). The formation of the nanowires took place by one dimensional self‐assembly, governed by π‐π stacking of the P3HT units.

TEM high contrast images showing P3HT nanowires fabricated by spin‐coating under a solvent vapor pressure.

magnified imageTEM high contrast images showing P3HT nanowires fabricated by spin‐coating under a solvent vapor pressure.

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