Solute atom-dislocation binding in dilute copper alloys

✍ Scribed by E.C Oren; N.F Fiore; C.L Bauer

• Publisher: Elsevier Science
• Year: 1966
• Weight: 828 KB
• Volume: 14
• Category: Article
• ISSN: 0001-6160
• DOI: 10.1016/0001-6160(66)90080-0

✦ Synopsis

Internal friction experiments have been performed on [loo] oriented single cry&ah of dilute coppersilicon end copper-tin alloys in an attempt

to determine the binding potential energies of silicon end tin solute atoms to dislocations and to compare the results with the value recently obtained for germanium in copper. Comperison of the measured v&es ellows a test of binding energy theory since the three solute species are of different size, yet exhibit similar electrical end ohemioel inters&ions in solution. The meesuremente have been made using the Msrx aomposite oscillator technique with the specimen driven in its fundamental mode of longitudinsl vibration et a frequency of 80 kc/s at temper&m= between 198" and 67S°C. The strain emphtude dependence of the hysteretic decrement is in good agreement with predictions of the Gram&o-L&eke theory of disloeetion demping end analysis of the data yields velues for the solute atom-dislocation binding potential energy of -0.16 & 0.02, -0.22 rfi 0.06 end -0.40 & 0.10 eV for silicon, germani am end tin, respectively. These values are in generel agreement with the predictions of theory end indioate thet the dominant oontribution to the binding potential energy is due to the size misfit of the solute atoms. In addition, values for the salute atom-dislwstion binding entropy are found to be 3.0 f 0.4 1%. 2.0 f 0.9 k end -0.2 f 1.6 k (k is Boltzmann's ctonstent) for silicon, germenium end tin, respectively.