We report growth velocity measurements of highly undercooled pure Si and Si-Ge melts (2.5 and 10.0 at.% Ge) processed by containerless electromagnetic levitation. The existence of two regimes of growth for pure Si can be confirmed: faceted growth at low undercoolings and dendritic growth at high und
โฆ LIBER โฆ
Solidification of highly undercooled Si and Ge droplets
โ Scribed by Evans, P.V.; Devaud, G.; Kelly, T.F.; Kim, Yeon-Wook
- Book ID
- 122883321
- Publisher
- Elsevier Science
- Year
- 1990
- Weight
- 703 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0956-7151
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