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Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry

✍ Scribed by Chan, T. K.; Fang, F.; Markwitz, A.; Osipowicz, T.


Book ID
121335753
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
1013 KB
Volume
101
Category
Article
ISSN
0003-6951

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