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Sol−Gel Fabrication and Electrical Property of Nanocrystalline (RE 2 O 3 ) 0.08 (ZrO 2 ) 0.92 (RE = Sc, Y) Thin Films

✍ Scribed by Zhang, Y. W.; Yang, Y.; Jin, S.; Tian, S. J.; Li, G. B.; Jia, J. T.; Liao, C. S.; Yan, C. H.

Book ID
118059361
Publisher
American Chemical Society
Year
2001
Tongue
English
Weight
244 KB
Volume
13
Category
Article
ISSN
0897-4756

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ChemInform Abstract: Sol—Gel Fabrication
ChemInform Abstract: Sol—Gel Fabrication and Electrical Property of Nanocrystalline (Ln2O3)0.08(ZrO2)0.92 (Ln: Sc, Y) Thin Films.
✍ Y. W. Zhang; Y. Yang; S. Jin; S. J. Tian; G. B. Li; J. T. Jia; C. S. Liao; C. H. 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 35 KB 👁 2 views

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Structural and electrical properties of
Structural and electrical properties of sol–gel deposited Pb(Zr0.92Ti0.08)O3 thin films doped with Nb
✍ L. Pintilie; I. Boerasu; M. Pereira; M.J.M. Gomes 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 250 KB

Pb(Zr, Ti)O 3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at.% Nb were deposited by sol-gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properties of Zr-rich PZT phase. It was found that a residu