There has been an enormous infusion of new ideas in the field of solar cells over the last 15 years; discourse on energy transfer has gotten much richer, and nanostructures and nanomaterials have revolutionized the possibilities for new technological developments. However, solar energy cannot become
Solar Cell Device Physics
β Scribed by Stephen Fonash
- Publisher
- AP
- Year
- 2010
- Tongue
- English
- Leaves
- 367
- Edition
- 2ed.
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
There has been an enormous infusion of new ideas in the field of solar cells over the last 15 years; discourse on energy transfer has gotten much richer, and nanostructures and nanomaterials have revolutionized the possibilities for new technological developments. However, solar energy cannot become ubiquitous in the world's power markets unless it can become economically competitive with legacy generation methods such as fossil fuels. The new edition of Dr. Stephen Fonash's definitive text points the way toward greater efficiency and cheaper production by adding coverage of cutting-edge topics in plasmonics, multi-exiton generation processes, nanostructures and nanomaterials such as quantum dots. The book's new structure improves readability by shifting many detailed equations to appendices, and balances the first edition's semiconductor coverage with an emphasis on thin-films. Further, it now demonstrates physical principles with simulations in the well-known AMPS computer code developed by the author. Classic text now updated with new advances in nanomaterials and thin films that point the way to cheaper, more efficient solar energy production Many of the detailed equations from the first edition have been shifted to appendices in order to improve readability *Important theoretical points are now accompanied by concrete demonstrations via included simulations created with the well-known AMPS computer code
β¦ Table of Contents
Cover Page......Page 1
Solar Cell Device Physics......Page 3
Copyright......Page 4
Dedication......Page 5
Preface......Page 6
Acknowledgments......Page 8
List of Symbols......Page 9
List of Abbreviations......Page 20
Photovoltaic Energy Conversion......Page 22
Solar cells and solar energy conversion......Page 23
Solar cell applications......Page 28
References......Page 29
Introduction......Page 30
Crystalline and polycrystalline solids......Page 31
Phonon spectra of solids......Page 34
Single-crystal, multicrystalline, and microcrystalline solids......Page 35
Amorphous Solids......Page 38
Single-electron states......Page 39
Excitons......Page 44
Nanoparticles and nanocrystalline solids......Page 45
Amorphous Solids......Page 47
Organic Solids......Page 48
Absorption Processes......Page 49
Interference, reflection, and scattering processes......Page 53
Carrier recombination and trapping......Page 57
Radiative recombination......Page 60
Shockley-Read-Hall recombination......Page 61
Auger recombination......Page 63
Photocarrier generation......Page 66
Transport processes in bulk solids......Page 67
Bulk Region Conduction Band Transport......Page 68
Bulk Region Valence Band Transport......Page 70
Amorphous materials......Page 73
Transport processes at interfaces......Page 74
Thermionic Emission......Page 75
Multistep Tunneling......Page 76
Minority Carrier Injection......Page 77
General Comment......Page 78
Continuity concept......Page 79
The mathematical system......Page 81
Origins of photovoltaic action......Page 84
References......Page 85
Introduction......Page 87
General comments on band diagrams......Page 89
Photovoltaic action arising from built-in electrostatic fields......Page 93
Photovoltaic action arising from diffusion......Page 103
Photovoltaic action arising from effective fields......Page 105
Summary of practical structures......Page 112
Absorber materials......Page 115
Absorber properties......Page 116
Metal Contacts......Page 122
Hole transport-electron blocking and electron transport-hole blocking layers......Page 124
Selective ohmic contacts......Page 125
Absorption Length......Page 127
Exciton diffusion length......Page 129
Electron and hole diffusion and drift lengths......Page 130
Absorption length......Page 132
Using the nano-scale to capture lost energy......Page 135
The role of scale in light management......Page 136
References......Page 137
Introduction......Page 141
Transport......Page 144
The homojunction barrier region......Page 151
Analysis of homojunction device physics: numerical approach......Page 152
Basic pβn homojunction......Page 153
Addition of a front HT-EBL......Page 161
Addition of a front HT-EBL and back ET-HBL......Page 165
Addition of a front high-low junction......Page 169
A pβiβn cell with a front HT-EBL and back ET-HBL......Page 174
A pβiβn cell using a poor absorber......Page 175
Analysis of homojunction device physics: analytical approach......Page 186
Basic pβn homojunction......Page 187
Some homojunction configurations......Page 199
References......Page 201
Introduction......Page 203
Transport......Page 209
The heterojunction barrier region......Page 213
Analysis of heterojunction device physics: numerical approach......Page 222
Effective-force-field barrier only......Page 223
Addition of a built-in electrostatic-potential barrier to the effective-force-field barrier......Page 232
Window-absorber structure......Page 242
Window-absorber structure with absorber interface recombination......Page 245
Window-absorber structure with absorber interface trapping......Page 251
Window-absorber structure with window interface trapping and absorber interface recombination......Page 254
Absorption by exciton generation......Page 257
Structure with effective forces only......Page 259
Structure with interface recombination......Page 263
Structure with interface recombination and a built-in potential......Page 265
Absorption by free electronβhole excitations......Page 267
Some heterojunction configurations......Page 279
References......Page 281
Introduction......Page 283
Transport......Page 288
The surface-barrier region......Page 291
Analysis of surface-barrier device physics: numerical approach......Page 293
Analysis of surface-barrier device physics: analytical approach......Page 303
Some surface-barrier configurations......Page 311
References......Page 313
Introduction......Page 315
Transport......Page 317
The dye-sensitized solar cell barrier region......Page 320
Analysis of DSSC device physics: numerical approach......Page 321
Some DSSC configurations......Page 327
References......Page 328
The Absorption Coefficient......Page 330
Reference......Page 331
Radiative Recombination......Page 332
Shockley-Read-Hall (Gap-stateβassisted) Recombination......Page 335
References......Page 342
Conduction- and Valence-band Transport......Page 343
References......Page 351
The Quasi-neutral-region Assumption and Lifetime Semiconductors......Page 352
References......Page 354
Determining p(x) and n(x) for the Space-charge-neutral Regions of a Homojunction......Page 355
Determining n(x) for the Space-charge-neutral Region of a Heterojunction p-type Bottom Material......Page 358
C......Page 361
E......Page 362
I......Page 363
N......Page 364
Q......Page 365
S......Page 366
W......Page 367
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