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Soft Solution Route to Directionally Grown ZnO Nanorod Arrays on Si Wafer; Room-Temperature Ultraviolet Laser

✍ Scribed by J.-H. Choy; E.-S. Jang; J.-H. Won; J.-H. Chung; D.-J. Jang; Y.-W. Kim


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
216 KB
Volume
15
Category
Article
ISSN
0935-9648

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✦ Synopsis


A high‐quality ZnO nanorod array (NRA) has been successfully grown on a Si wafer by a wet‐chemical process, where the Si wafer was dip‐coated with 4 nm sized ZnO nanoparticles as a buffer and seed layer prior to the crystal growth. It is found that the as‐prepared ZnO NRA has a threshold power density of ∼ 70 kW cm^–2^, which is comparable to the lowest one determined for ZnO NRAs on Al~2~O~3~ substrates (40 kW cm^–2^). The ultraviolet lasing efficiency of the ZnO NRAs is thus similar for both substrates.