Size effect on quasibound states and negative differential resistances in step-barrier structures

✍ Scribed by Yong Guo; Bing-Lin Gu; Zhong Zeng; Yoshiyuki Kawazoe

• Book ID: 104337737
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 118 KB
• Volume: 261
• Category: Article
• ISSN: 0375-9601
• DOI: 10.1016/s0375-9601(99)00568-x

✦ Synopsis

Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.