Six inch Fe-doped InP single crystal

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 341 KB
• Volume: 18
• Category: Article
• ISSN: 0961-1290
• DOI: 10.1016/s0961-1290(05)71164-9

✦ Synopsis

A team, from Sumitomo, and subsidiary company Sumiden Semiconductor Materials Co, was behind the work presented by Noriyuki Hosaka et al on Japan's development of 6-inch Fe-doped InP single crystal by Vertical Boat method. Recent filer telecommunication system progress is creating demand for ultra high speed digital devices, such as HBTs or HEMTs for ICs.These devices are fabricated on semi-insulating Fe-doped InP substrates.As performance of these devices is