✦ LIBER ✦
Six-band kâ p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
✍ Scribed by Fischetti, M. V.; Ren, Z.; Solomon, P. M.; Yang, M.; Rim, K.
- Book ID
- 119959063
- Publisher
- American Institute of Physics
- Year
- 2003
- Tongue
- English
- Weight
- 595 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0021-8979
No coin nor oath required. For personal study only.