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Si[sub 1−y]C[sub y]/Si(001) gas-source molecular beam epitaxy from Si[sub 2]H[sub 6] and CH[sub 3]SiH[sub 3]: Surface reaction paths and growth kinetics

✍ Scribed by Foo, Y. L.; Bratland, K. A.; Cho, B.; Desjardins, P.; Greene, J. E.


Book ID
121457236
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
347 KB
Volume
93
Category
Article
ISSN
0021-8979

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