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Si∕SiO[sub 2] Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels

✍ Scribed by Ho, C. P.


Book ID
125941709
Publisher
The Electrochemical Society
Year
1979
Tongue
English
Weight
783 KB
Volume
126
Category
Article
ISSN
0013-4651

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