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Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature

โœ Scribed by Syzranov, V. S.; Klimenko, O. A.; Ermolov, A. S.; Kazakov, I. P.; Shmelev, S. S.; Egorkin, V. I.; Murzin, V. N.


Book ID
121625558
Publisher
Allerton Press, Inc.
Year
2013
Tongue
English
Weight
753 KB
Volume
40
Category
Article
ISSN
1068-3356

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