Single-step selective metallization of Mg/NH3 pretreated Teflon® by copper chemical vapor deposition

✍ Scribed by P Doppelt; C Combellas; F Kanoufi; T.Y Chen; S Richardson; A Thiébault

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 179 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00306-8

✦ Synopsis

The surface of Teflon , which can be made hydrophilic by chemical treatment in a solution of solvated electrons in the presence of magnesium, can be restored by UV photochemical oxidation under oxygen. The Mg / NH treated Teflon surfaces 3 are easily metallized in a single-step process by copper CVD when (MHY)Cu(hfac) is used as precursor (hfac, hexafluoroacetylacetonate; MHY, 2-methyl-1-hexene-3-yne). The growth rate of the copper film (thickness 200-500 nm) is in the range 30-50 nm / min. The Cu films, with a resistivity of 1.960.2 mV cm, are pure, as determined by X-ray photoelectron spectroscopy. Patterned UV irradiation of the treated Teflon resulted in an identical copper pattern after CVD and, hence, selective copper deposition could be achieved on Teflon.