Development of native, single crystal Al
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Schowalter, L. J. ;Schujman, S. B. ;Liu, W. ;Goorsky, M. ;Wood, M. C. ;Grandusky
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Article
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2006
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John Wiley and Sons
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English
β 870 KB
## Abstract Ultraβlow dislocation density aluminum nitride is a very promising substrate for many device structures based on the IIIβV nitride system. A better lattice and thermal expansion match than foreign substrates such as SiC or sapphire make AlN the substrate of choice for heteroepitaxial gr