Single impurity-assisted tunnelling in sub-micron n+n−n+ multilayers
✍ Scribed by P.C. Main; I.P. Roche; L. Eaves; J.R. Owers-Bradley; D.C. Taylor; K.E. Singer; G. Hill; M.A. Pate
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 318 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We have investigated n+n-n + structures of GaAs in which the length of the active n-region is comparable with the average donor separation.
At low temperatures the resistance is independent of temperature and the magnetoresistanee is large and anisotropic. These results are described by a simple quantitative model in which the low temperature conductivity is controlled by electrons tunnelling via shallow donors close to the mid-plane of the actiw~ layer.
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