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Single impurity-assisted tunnelling in sub-micron n+n−n+ multilayers

✍ Scribed by P.C. Main; I.P. Roche; L. Eaves; J.R. Owers-Bradley; D.C. Taylor; K.E. Singer; G. Hill; M.A. Pate


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
318 KB
Volume
2
Category
Article
ISSN
0749-6036

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✦ Synopsis


We have investigated n+n-n + structures of GaAs in which the length of the active n-region is comparable with the average donor separation.

At low temperatures the resistance is independent of temperature and the magnetoresistanee is large and anisotropic. These results are described by a simple quantitative model in which the low temperature conductivity is controlled by electrons tunnelling via shallow donors close to the mid-plane of the actiw~ layer.


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