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Single-Grain Si TFTs and Circuits Inside Location-Controlled Grains Fabricated Using a Capping Layer of SiO2
✍ Scribed by Rana, V.; Ishihara, R.; Hiroshima, Y.; Inoue, S.; Shimoda, T.; Metselaar, W.; Beenakker, K.
- Book ID
- 114618558
- Publisher
- IEEE
- Year
- 2007
- Tongue
- English
- Weight
- 399 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0018-9383
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