✦ LIBER ✦
Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence
✍ Scribed by Allenspach, M.; Mouret, I.; Titus, J.L.; Wheatley, C.F.; Pease, R.L.; Brews, J.R.; Schrimpf, R.D.; Galloway, K.F.
- Book ID
- 111858943
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 630 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0018-9499
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