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Single-event burnout of n-p-n bipolar-junction transistors in hybrid DC/DC converters

โœ Scribed by Warren, K.; Roth, D.; Kinnison, J.; Pappalardo, R.

Book ID
115472428
Publisher
IEEE
Year
2002
Tongue
English
Weight
182 KB
Volume
49
Category
Article
ISSN
0018-9499

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This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n รพ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energ