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Single-electron tunneling in point-contact tunnel junctions

✍ Scribed by R.T.M. Smokers; P.J.M. van Bentum; H. van Kempen

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
233 KB
Volume
165-166
Category
Article
ISSN
0921-4526

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✦ Synopsis

SET effects have been observed in point-contact tunnel junctions on surface doped Si. Changing the electromagnetic environment does not appreciably affect the junction capacitance. Furthermore the influence of a Coulomb gap on STM-spectroscopy on superconductors is discussed.

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